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2025-12-26
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This article introduces the basic concepts, physical structures, and operating characteristics of PMOS and NMOS, details the definitions of source, drain, and gate, and compares the differences between NMOS and PMOS in terms of voltage control methods, current flow directions, applicable switch types, and semiconductor substrate and doping structures.
PMOS and NMOS
S: Source
D: Drain
G: Gate
NMOS: Usepositive voltageto control conduction, current flows fromdrain (D) to source (S), suitable forlow-side switch。
PMOS: UseNegative voltageControls conduction, current flows fromSource (S) → Drain (D), suitable forhigh-side switch。



The above figure is a schematic of PMOS. The substrate is N-type semiconductor, and the source and drain are doped with P-type impurities (such as boron B) to form P+ regions. N-type silicon has many electrons.

The above figure is a schematic of NMOS. The substrate is P-type silicon, and the source and drain are doped with N-type impurities (such as phosphorus P) to form N+ regions. P-type silicon has many holes.
Reference
Reference Bilibili video: